型号 SI3445ADV-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH 8V 4.4A 6-TSOP
SI3445ADV-T1-GE3 PDF
代理商 SI3445ADV-T1-GE3
标准包装 3,000
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 8V
电流 - 连续漏极(Id) @ 25° C 4.4A
开态Rds(最大)@ Id, Vgs @ 25° C 42 毫欧 @ 5.8A,4.5V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 19nC @ 4.5V
功率 - 最大 1.1W
安装类型 表面贴装
封装/外壳 6-TSOP(0.065",1.65mm 宽)
供应商设备封装 6-TSOP
包装 带卷 (TR)
同类型PDF
SI3445DV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
SI3445DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
SI3446ADV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6A 6-TSOP
SI3446ADV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6A 6-TSOP
SI3446ADV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6A 6-TSOP
SI3446ADV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A 6-TSOP
SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI3447BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI3447CDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 7.8A 6TSOP
SI3447CDV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP
SI3447CDV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP
SI3447CDV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP
SI3451DV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.8A 6-TSOP
SI3451DV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.8A 6-TSOP
SI3451DV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.8A 6-TSOP
SI3451DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.8A 6-TSOP
SI3452A-B01-GM Silicon Laboratories Inc IC POE CONTROLLER MIDSPAN 40QFN
SI3452A-B01-IM Silicon Laboratories Inc IC POE CONTROLLER MIDSPAN 40QFN